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SUM33N20-60P
New Product
N-Channel 200-V (D-S) 175 °C MOSFET
Vishay Siliconix
PRODUCT SUMMARY
V (BR)DSS (V) r DS(on) ( Ω )
0.059 at V GS = 15 V
200
0.060 at V GS = 10 V
I D (A)
33
33
Q g (Typ)
53
FEATURES
? TrenchFET ? Power MOSFETS
? 150 °C Junction Temperature
? 100 % UIS and R g Tested
RoHS
COMPLIANT
APPLICATIONS
? Power Supply
? Lighting
? Industrial
D
TO-26 3
G
G
D S
Top View
Orderin g Information: S UM 33 N20-60P-E 3 (Le a d (P b )-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T C = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
Limit
200
± 25
Unit
V
156
Continuous Drain Current (T J = 175 °C)
Pulsed Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy a
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
T C = 25 °C
T C = 100 °C
L = 0.1 mH
T C = 25 °C
T A = 25 °C c
I D
I DM
I AS
E AS
P D
T J , T stg
33
20.8
80
20
20
b
3.12
- 55 to 175
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount) c
Junction-to-Case (Drain)
Symbol
R thJA
R thJC
Limit
40
0.8
Unit
°C/W
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
Document Number: 74291
S-62209-Rev. A, 30-Oct-06
www.vishay.com
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